Method of making an aluminum contact

Details Method of making an aluminum contact Method of making an aluminum contact

1996-12-13

1998-12-29

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438633, 438645, 438699, 438701, H01L 21302

Patent

active

058541403

ABSTRACT:
A method of forming aluminum contacts of submicron dimensions wherein, after formation of both vias and line openings in a silicon oxide layer, a metal stop layer is deposited, followed by deposition of aluminum. Alternatively, the metal stop layer is deposited prior to forming the vias and line openings. The excess aluminum is removed by chemical-mechanical polishing, the stop layer providing high selectivity to the chemical mechanical polishing. The stop layer is then removed. The resultant silicon oxide-aluminum surface is planar and undamaged by the chemical-mechanical polishing step.

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