Semiconductor device having a minute contact hole

Details Semiconductor device having a minute contact hole Semiconductor device having a minute contact hole

1996-07-22

1998-03-10

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257776, H01L 2348

Patent

active

057264996

ABSTRACT:
A contact structure includes a depression formed in an insulation layer covered by an etching resistant layer and a through hole provided in the depression, wherein a ring-shaped wall member is provided on the depression such that the space formed inside the ring-shaped wall member continues to the through hole. The ring-shaped wall member is formed of a material having an etching rate different from the material forming insulation layer or the etching resistant layer.

REFERENCES:
patent: 4502069 (1985-02-01), Schuh
patent: 5614765 (1997-03-01), Avanzino et al.

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