Production of semiconductor structures with buried resistive or

Metal working – Method of mechanical manufacture – Assembling or joining

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148 15, 148175, 148187, 357 91, 372 46, H01L 21263, H01L 2126

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active

045397430

ABSTRACT:
The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

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