Method of making a trench capacitor and dram memory cell

Details Method of making a trench capacitor and dram memory cell Method of making a trench capacitor and dram memory cell

1985-10-07

1987-07-14

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576W, 29576C, 29577C, 29580, 357 236, 156643, 148188, H01L 2710, H01C 1124

Patent

active

046793003

ABSTRACT:
A method of making a trench capacitor employs an N-type switchable plate formed in a P-type substrate for holding charge at either zero volts or a positive TC voltage and a P-type ground plate that fills in a trench around a memory cell, so that P-type dopant diffuses through a thin oxide insulator to form a channel stop and a pinhold short through the oxide is self-healing by the formation of a reverse-biased P-N diode that cuts off the flow of current through the pinhole.

REFERENCES:
patent: 4332076 (1982-01-01), Zaldivar
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4397075 (1983-08-01), Fatula, Jr. et al.
patent: 4455740 (1984-06-01), Iwai
patent: 4604150 (1986-08-01), Lin
Minegishi, `A Submicron CMOS Megabit Level Dynamic RAM Technology Using Doped Phase Trench Capacitor Cell`, IEDM 1983, pp.-319-322.
Arai, `Submicron MOS VLSI Process Technologies`; IEDM 1983, pp. 19-22.
Wada, `A Folded Capacitor Cell (F.C.C.) for Future Megabit Drams,` IEDM 1984, pp. 244-247.
Sunami, `A Corrugated Capacitor Cell (CCC) for Megabit Dynamic MOS Memories`, IEDM 1982 pp. 806-808.

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