Method for forming crystal and crystal article obtained by said

Details Method for forming crystal and crystal article obtained by said Method for forming crystal and crystal article obtained by said

1995-06-06

1998-12-29

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 90, 117 95, 117106, C30B 2518

Patent

active

058534784

ABSTRACT:
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.

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