Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1991-01-07

1992-05-05

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

051114712

ABSTRACT:
A novel semiconductor laser device includes a P-type semiconductor substrate, an N-type InP current blocking layer on the substrate, a P-type InP buried layer of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a planar P-type first InP cladding layer, a planar InGaAsP active layer, and a planar N-type second InP cladding layer. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer is disposed on the N-type current blocking layer burying the ridge and an N-type contact layer is formed opposite and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed.

REFERENCES:
patent: 4935936 (1990-06-01), Nelson et al.
patent: 4949352 (1990-08-01), Plumb
patent: 4984244 (1991-01-01), Yamamoto et al.
Kakimoto et al, "InGaAsP/InP . . . InP Substrate", Optoelectronics, vol. 3, No. 2, 1988, pp. 197-225.
"LD for Optical Fiber Communications", Trigger, 1986, Special Issue, p. 39.

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