Solid state image sensor

Details Solid state image sensor Solid state image sensor

1989-09-22

1991-08-27

Jackson, Jr., Jerome

357 24, 357 32, H01L 2978, H01L 2714, H01L 3106

Patent

active

050437836

ABSTRACT:
A solid state image sensor includes a semiconductor substrate of a first conductivity type, in a plurality of cell units formed in the surface region of the semiconductor substrate. Each of the cell units includes a photo detector portion and an electric charge reading portion. The photo detector portion includes a first impurity region of a second conductivity type formed in the surface region of the semiconductor substrate and a second impurity diffusion region of the first conductivity type formed in the surface region of the first impurity region. The electric charge reading portion includes a third impurity region of the second conductivity type formed in the surface of the semiconductor substrate, a first insulation film formed on the third impurity diffusion region and an electrode formed in the first insulation film.

REFERENCES:
patent: 4484210 (1984-11-01), Shiraki et al.
patent: 4527182 (1985-07-01), Ishihara et al.
patent: 4851890 (1989-07-01), Miyatake
IEEE International Solid-State Circuits Conference, San Francisco, 22th-24th Feb. 1984, vol. 27, Conf. 31, pp. 32, 33, IEEE; New York, U.S.; Y. Matsunaga et al.; "An Interline Transfer CCD Imager".
International Electrode Devices Meeting; San Francisco, Calif., 9th-12th Dec. 1984, pp. 28-31, IEDM; B. C. Burkey et al.; "The Pinned Photodiode for an Interline-Transfer CCD Image Sensor".
"Electronic Shutter for Image Sensor Using Photodiodes"; WO 88/00759; PCT/US87/01662.

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