Integrated circuit device comprising vertical channel FET resist

Details Integrated circuit device comprising vertical channel FET resist Integrated circuit device comprising vertical channel FET resist

1975-03-12

1976-09-21

Wojciechowicz, Edward J.

357 23, 357 51, 357 88, 357 52, H01L 2980, H01L 2702, H01L 2934, H01L 2978

Patent

active

039822630

ABSTRACT:
A large value resistor is formed during the standard processing steps in the fabrication of a monolithic integrated circuit device, the resistor being formed by a vertical channel FET, the channel of the FET being formed during diffusion of the isolation regions for the device, this diffusion extending down through the epitaxial layer of the device and through a channel defining opening in a buried layer region between the epitaxial layer and the substrate of the device.

REFERENCES:
patent: 3414782 (1968-12-01), Lin et al.
patent: 3823353 (1974-07-01), Berger et al.
IBM Tech. Bul. -- vol. 12, No. 12, May 1970 -- Gates p. 2061.
IBM Tech. Bul. -- vol. 12, No. 12, May 1970 -- Feinberg et al. p. 2049.

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