Coherent light generators – Particular active media – Semiconductor
Patent
1991-09-09
1993-01-26
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 50, H01S 319
Patent
active
051827573
ABSTRACT:
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
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Asaka Tatsuya
Iwano Hideaki
Mori Katsumi
Davie James W.
Seiko Epson Corporation
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