Method for making high K PLZT ceramic capacitor

Details Method for making high K PLZT ceramic capacitor Method for making high K PLZT ceramic capacitor

1980-08-18

1982-04-13

Derrington, James H.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264235, 264346, 361321, C04B 3549

Patent

active

043247504

ABSTRACT:
A powder blend consisting essentially of precursors of a single antiferroelectric compound of lead-barium-lanthanum-zirconate titanate doped with silver, includes at least 0.7 mole percent bismuth permitting a near-full reaction to be achieved at calcining in the low temperature range of 1000.degree. C. to 1130.degree. C. A body is formed of the pulverized calcined material, which body is then sintered in a closed container at 1100.degree. C. Residual PbO remains in the body rendering it conductive. The body is annealed in open atmosphere at 950.degree. C. to drive out the free PbO providing an excellent dielectric having an unusual combination of high K and low TCC.

REFERENCES:
patent: 2541833 (1951-02-01), Roberts
patent: 3732117 (1973-05-01), Nitta
patent: 4027209 (1977-05-01), Maher
patent: 4135224 (1979-01-01), Maher
patent: 4219866 (1980-08-01), Maher
Atkin, Holman and Fulrath, Substitution of Bi and Nb Ions in Lead Zirconate-Titanate, J. Am. Ceramic Soc.; vol. 54, No. 2; Feb. 1971; pp. 113-115.
James and Messer, The Preparation of Transparent PLZT Ceramics from Oxide Powders by Liquid-Phase Sintering; Trans. and Journal of British Cer. Soc., vol. 74, 1978, pp. 152-158.

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