Method for designing high-Q inductors in silicon technology with

Details Method for designing high-Q inductors in silicon technology with Method for designing high-Q inductors in silicon technology with

1994-10-21

1996-03-05

Teska, Kevin J.

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364488, 364490, H03B 714

Patent

active

054973376

ABSTRACT:
A method of designing a high Q inductor for implementation in multiple metalization levels in conventional integrated circuit technology uses a software assisted iterative technique to achieve a design Q factor. The inductor turns utilize the multiple metalization levels to reduce inductor resistance.

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