Semiconductor device with improved turn-off capability

Details Semiconductor device with improved turn-off capability Semiconductor device with improved turn-off capability

1991-03-04

1992-05-05

Hille, Rolf

357 234, 357 2314, 357 39, H01L 2974, H01L 29747, H01L 2910, H01L 2978

Patent

active

051112680

ABSTRACT:
A four-region semiconductor device (that is, a p-n-p-n or n-p-n-p device) including at least one further region utilizes integral FET structure for diverting carriers away from an interior region of the device and shunting them to a main current-carrying electrode of the device, whereby the device is provided with a turn-off capability. The device requires only a small amount of energy for its turn-off control gate, and utilizes a high percentage of its semiconductor body for carrying current through the device. High speed turn-off is achieved in a particular embodiment of the device.

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Chu, Chang, K., "Geometry of Thyristor Cathode Shunts", IEEE Transactions on Electron Devices, vol. ED-17, No. 9, Sep. 1970, pp. 687-690.

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