Quantum effects in heterostructure lasers

Oscillators – Molecular or particle resonant type

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357 16, 357 18, H01S 300

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039822079

ABSTRACT:
Described is a heterostructure semiconductor laser comprising a pair of wide bandgap layers having an active region sandwiched therebetween characterized in that the active region includes a plurality of thin narrow bandgap active layers interleaved with a plurality of thin relatively wider bandgap passive layers. The passive layers are thin enough (e.g., about 10-500 Angstroms) to permit electrons to distribute among the active layers either by tunneling through, or by hopping over, the energy barriers created by the passive layers. The active layers are thin enough (e.g., about 10-500 Angstroms) to separate the quantum levels of electrons confined therein. These lasers exhibit wavelength tunability by changing the thickness of the active layers. Also described is the possibility of threshold reductions resulting from modification of the density of electron states.

REFERENCES:
patent: 3691476 (1972-09-01), Hayashi
patent: 3911376 (1975-10-01), Thompson
"Quantum States of Confined Carriers, Etc.," R. Dingle et al., Physical Review Letters, vol. 33, No. 14, 9-30-74, pp. 827-830.
"Ga.sub.1.sub.-x Al.sub.x A.sub.s Superlattices Profiled, etc.," R. Ludeke et al., Applied Physics Letters, vol. 24, No. 9, 5-1-74, pp. 417-419.

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