Collector-top type transistor causing no deterioration in curren

Details Collector-top type transistor causing no deterioration in curren Collector-top type transistor causing no deterioration in curren

1989-12-05

1992-05-05

Hille, Rolf

357 16, 357 22, 357 56, 357 35, H01L 2972, H01L 29161, H01L 2980, H01L 2906

Patent

active

051112655

ABSTRACT:
The collector-top type transistor according to the present invention has at least principal semiconductor layers of an emitter layer, tunnel barrier layers having electron affinities smaller than those of the emitter and a base, the base layer, and a collector layer formed in the above-mentioned order on a semiconductor substrate in which the injection of the minority carriers from the emitter to the base is controlled by the tunneling mechanism via the tunnel barrier layer where the film thickness of the tunnel barrier layer in the extrinsic transistor region is regulated to be larger than that in the intrinsic transistor region.

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