Multicellular FET having a Schottky diode merged therewith

Details Multicellular FET having a Schottky diode merged therewith Multicellular FET having a Schottky diode merged therewith

1990-08-28

1992-05-05

James, Andrew J.

357 38, 357 234, H01L 2978

Patent

active

051112531

ABSTRACT:
A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.

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