Insulated gate bipolar transistor and method of manufacturing th

Details Insulated gate bipolar transistor and method of manufacturing th Insulated gate bipolar transistor and method of manufacturing th

1990-06-26

1993-01-26

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257144, 257405, 257617, H01L 2974

Patent

active

051826267

ABSTRACT:
In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed to practice the lifetime control of an IGBT with good controllability. Basically, the lifetime control without change in the threshold voltage is implemented by increasing the threshold voltage on or before irradiating the ionizing radiation so as to cancel the influence of each other. Further, the lifetime control without change in the threshold voltage is implemented with higher accuracy by irradiating a light ion beam from a rear main electrode side so as to cause crystal defects locally in a specific region in an epitaxial layer.

REFERENCES:
patent: 4587713 (1986-05-01), Goodman et al.
patent: 4760431 (1988-07-01), Nakagawa et al.
Localized Lifetime Control in Insulated-Gate Transistors by Proton Implantation, IEEE Transaction on Electron Devices, Nov. 1986, vol. ED-33, No. 11, pp. 1667-1671.
Comparison of Neutron and Electron Irradiation for Controlling IGT Switching Speed, IEEE Transaction on Electron Devices, Sep. 1985, vol. ED-32, No. 9, pp. 1629-1632.
Proton Implantation for Silicon Power Devices, Proceedings of 1988 International Symposium on Power Semiconductor Devices, Tokyo, pp. 147-152.

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