Low loss drain pulser circuit for solid state microwave power am

Details Low loss drain pulser circuit for solid state microwave power am Low loss drain pulser circuit for solid state microwave power am

1990-05-31

1992-05-05

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 3072963, 307270, 307584, 307246, 307482, 330156, 330277, H03K 19086, H03K 1716

Patent

active

051110849

ABSTRACT:
A drain pulsing circuit for intermittently applying electric power to the drain of a solid state amplifier uses a N-channel MOSFET as the drain switch, but does not require an external bias voltage to drive the drain switch gate. The pulsing circuit generally comprises a control input circuit for generating a control pulse, and a charge pumping circuit having a capacitor that is connected to the output of the control input circuit, and first and second complementary MOSFET switches. The capacitor in the pumping circuit stores a charge during an off cycle when the control input circuit does not generate a control pulse. However, when a control pulse is generated, the first and second complementary MOSFET switches of the pumping circuit connect the gate of the N-channel drain switch MOSFET to the voltages associated with both the capacitor charge and the control pulse (which "pumps" the capacitor to a higher charge) in order to temporarily bias the N-channel drain switch MOSFET to an "on" state. The circuit has a faster switching speed and uses less power than similar designs utilizing P-channel MOSFETs as the drain switch, which makes it useful in applications where intermittent power control is required.

REFERENCES:
patent: 3286189 (1966-11-01), Mitchell et al.
patent: 4484092 (1984-11-01), Campbell, Jr.
patent: 4511811 (1985-04-01), Gupta
patent: 4612457 (1986-09-01), Prater
IBM Tech. Disc. Bull., vol. 18, No. 12, May 1986 "Low Power Substrate Voltage Generator", 307/296.2.

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