Slow ramp high drive output pad

Details Slow ramp high drive output pad Slow ramp high drive output pad

1990-09-05

1992-05-05

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307585, 307572, 307601, H03K 1760

Patent

active

051110644

ABSTRACT:
A CMOS drive circuit an integrated circuit bonding pad is controlled by a pre-driver signals to change the potential on the output pad in accordance with these signals. Undesirable interference (emi) problems are eliminated or significantly reduced by slowing the ramp of change of the signal appearing on the output bonding pad when it changes from a high or positive binary state to a lower, relatively negative binary state. This is effected by splitting the output NMOS transistor of the CMOS output driver into two parallel connected, relatively small-sized transistor. Each of these transistors is driven from the signal input terminal through a relatively low current source which causes the gate capacitance to be slowly charged.

REFERENCES:
patent: 4789796 (1988-12-01), Foss
patent: 4820942 (1989-04-01), Chan
patent: 4918339 (1990-04-01), Shigeo et al.
patent: 4928023 (1990-05-01), Marshall
patent: 4961010 (1990-10-01), Davis

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