Driving circuit for semiconductor element

Details Driving circuit for semiconductor element Driving circuit for semiconductor element

1991-05-23

1992-05-05

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307633, 307253, H03K 1760, H03K 1772

Patent

active

051110610

ABSTRACT:
A driving circuit for a semiconductor element to be controlled by a first and second transistors being connected in series to selectively take ON-operation responsive to application of forward of reverse bias, comprises a reverse bias stop judging circuit having a detecting circuit for detecting reverse bias current being connected in a circuit which connects the second transistor with the semiconductor element to be controlled, a level detecting means for detecting that reverse bias current continuously exceeds a set level for a predetermined time, according to the detected result of the detecting circuit, means for temporarily stopping application of reverse bias to the semiconductor element to be controlled according to the detected output of the level detecting means, and means for restarting application of reverse bias after a predetermined time.

REFERENCES:
patent: 4117350 (1978-09-01), Kalfus et al.
patent: 4642483 (1987-02-01), Tomita
patent: 4890009 (1989-12-01), Miyazaki et al.
patent: 4996444 (1991-02-01), Thomas et al.

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