Process for forming electrodes for semiconductor devices by focu

Details Process for forming electrodes for semiconductor devices by focu Process for forming electrodes for semiconductor devices by focu

1989-04-14

1991-08-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG50, 437 29, 437192, 437203, H01L 2120, H01L 21265

Patent

active

050432907

ABSTRACT:
A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 4619840 (1986-10-01), Goldman et al.
patent: 4653428 (1987-03-01), Wilson et al.
patent: 4685030 (1987-08-01), Reyes et al.
patent: 4707717 (1987-11-01), Hirabayashi et al.
Kato et al., "Submicron Pattern Fabrication by Focused Ion Beam", J. Vac. Sci. Technol. B3(1), Jan/Feb. 1985, pp. 59-53.

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