Semiconductor processing method of providing an electrically con

Details Semiconductor processing method of providing an electrically con Semiconductor processing method of providing an electrically con

1995-04-28

1996-03-05

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437195, 437203, 1566431, 1566441, H01L 21283, H01L 213065

Patent

active

054967732

ABSTRACT:
A semiconductor processing method of providing an electrically conductive interconnecting plug between an elevationally inner conductive node and an elevationally outer conductive node includes, a) providing an inner node location to which electrical connection is to be made; b) providing an electrically insulative layer outwardly over the inner node location; c) patterning and etching a contact opening through the insulative layer to the inner node location; d) substantially filling the contact opening with an electrically conductive material to provide a conductive plug within the contact opening to the inner node location, the conductive plug defining an outermost fang gap between the conductive plug and the electrically insulative layer, the fang gap having a first width; e) widening the fang gap to a second width which is greater than the first width by a timed RF plasma etch of the electrically conductive material; f) providing an outer metal layer over the conductive plug after the widening step, the metal layer at least partially filling the widened fang gap; and g) patterning the metal layer into a conductive line which electrically interconnects with the conductive plug.

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