Method of fabricating an electrically alterable resistive compon

Details Method of fabricating an electrically alterable resistive compon Method of fabricating an electrically alterable resistive compon

1994-11-14

1996-03-05

Fourson, George

Fishing, trapping, and vermin destroying

437922, H01L 2904, H01L 2170

Patent

active

054967635

ABSTRACT:
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consist essentially of silicon, having a crystalline grain size which is smaller than polycrystalline with dopant atoms that are interstitial in the silicon. Process temperatures are limited such that the dopant atoms remain interstitial and do not become substitutional.

REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4404581 (1983-09-01), Tam et al.
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 5407851 (1995-04-01), Roesner
S. M. Sze, VLSI Technology McGraw Hill, 1983 pp. 103-105, 127.
Ted Kamins, Polycrystalline Silicon For Integrated Circuit Applications, pp. 53-55, copyright .RTM.1988 By Kluwer Academic Publishers.

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