Method for manufacturing dielectrics dividing wafer with isolate

Details Method for manufacturing dielectrics dividing wafer with isolate Method for manufacturing dielectrics dividing wafer with isolate

1994-08-18

1996-03-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG12, 148DIG85, 148DIG86, H01L 21301

Patent

active

054967600

ABSTRACT:
A dielectrics dividing wafer, and a method of manufacturing the wafer, is disclosed in which embedded dielectric films are provided in the interior of the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer, and partition dielectric films, in the form of vertical walls extending from the face surface and the rear surface of the wafer, to the embedded dielectric films, are provided to define semiconductor areas extending continuously from the face surface of the wafer to the rear surface of the wafer. The semiconductor areas can be used for vertical circuit elements. The partition dielectric films in conjunction with the embedded dielectric films and the face surface of the wafer also define additional planar semiconductor areas that can be used for planar structure circuit elements.

REFERENCES:
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patent: 3966577 (1976-06-01), Hochberg
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patent: 5072287 (1991-12-01), Nakagawa et al.
IEEE 1987 Custom Integrated Circuits Conference, "Dielectrically Isolated Intelligent Power Switch", Yu Ohata and Takao Izumita, pp. 443-446.

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