Formed top contact for non-flat semiconductor devices

Details Formed top contact for non-flat semiconductor devices Formed top contact for non-flat semiconductor devices

1990-02-12

1992-05-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437206, 437214, 437211, 361405, H01L 2350

Patent

active

051107619

ABSTRACT:
An improved contact is obtained to power devices having a raised dielectric region adjacent the die contact region by providing a contact dimple on the otherwise flat metal lead used for die contact. The dimple is arranged above the die contact and soldered thereto. The radius of curvature and depth of the dimple is adjusted so that the contact lead is far enough away from the edge of the surrounding raised dielectric at the edge of the die contact to provide a laterally concave outward air-solder interface in that location. This prevents solder creep onto the dielectric surface and avoids die edge shorting. Several dimple shapes are described.

REFERENCES:
patent: 3736367 (1973-05-01), Heinlen et al.
patent: 3997963 (1976-12-01), Riseman
patent: 4616412 (1986-10-01), Schroeder

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