Fishing – trapping – and vermin destroying
Patent
1990-09-28
1992-05-05
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 44, 437 39, 437201, 437913, 148DIG105, 148DIG111, H01L 2144
Patent
active
051107600
ABSTRACT:
Nanometer thick vertical metallic structures are fabricated on a substrate by depositing a metallic layer on a substrate surface on which one or more buttresses are formed, etching the metallic layer to expose the horizontal surfaces of the substrate and the buttresses, and etching the substrate to remove the buttresses, thereby producing vertical structures on the substrate. The metallic layer is formed by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, unlike that in conventional CVD reactors. The metallic layer thus formed has a grain size which is fraction of the thickness of the vertical structure.
REFERENCES:
patent: 4343082 (1982-08-01), Lepeelter et al.
patent: 4358340 (1982-09-01), Fu
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4455738 (1984-06-01), Homstom et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4578157 (1986-03-01), Halliwell et al.
patent: 4608271 (1986-08-01), Hieber et al.
patent: 4645563 (1987-02-01), Terada
patent: 4784718 (1988-09-01), Mitani et al.
patent: 4803181 (1989-02-01), Buchmann et al.
patent: 4886763 (1989-12-01), Suzki
Cooke, "A Review of LPCVD Metalization for Semiconductor Devices", Vacuum, ol. 35, No. 2, pp. 67-73, 1985.
Edelberg Barry A.
Hearn Brian E.
McDonnell Thomas E.
Nguyen Tuan
The United States of America as represented by the Secretary of
LandOfFree
Method of nanometer lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of nanometer lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of nanometer lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1412275