Integrated circuit with ion implanted hall-cell

Details Integrated circuit with ion implanted hall-cell Integrated circuit with ion implanted hall-cell

1978-10-06

1981-02-24

James, Andrew J.

357 48, 357 51, 357 91, H01L 2722, H01L 2982, H01L 2996

Patent

active

042531071

ABSTRACT:
A Hall-cell of relatively high sensitivity and low power consumption is provided in an isolated epitaxial pocket of an integrated circuit. The epitaxial layer is of opposite conductivity type to that of the supporting silicon substrate. The Hall-cell body of opposite conductivity type consists of an ion-implanted surface portion of the pocket and may have a thickness that is limited by a buried layer of the same type as that of the substrate. This Hall-cell is capable of being manufactured with closely controlled electrical properties and by steps imposing few restraints on the quality of other components in the integrated circuit.

REFERENCES:
patent: 3522494 (1970-08-01), Bosch
patent: 3596114 (1971-07-01), Maupin
patent: 3811075 (1974-05-01), Shiga
patent: 3823354 (1974-07-01), Janssen
patent: 3852802 (1974-12-01), Wolf et al.
patent: 4011469 (1977-03-01), Chapron
patent: 4123772 (1978-10-01), Janssen

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