Semiconductor power device incorporating a schottky barrier diod

Details Semiconductor power device incorporating a schottky barrier diod Semiconductor power device incorporating a schottky barrier diod

1980-07-03

1981-02-24

Clawson, Jr., Joseph E.

357 20, 357 36, 357 56, 357 34, H01L 2948

Patent

active

042531055

ABSTRACT:
A semiconductor power device comprises a semiconductor pellet having first and second opposing major surfaces, including, in series, emitter, base and collector regions forming a PNP transistor. The collector region is substantially planar and adjacent to the second surface; the base region is adjacent to the collector region and extends to the first surface; and the emitter region extends into the pellet from the first surface such that it is substantially surrounded by the base region. The emitter region substantially surrounds a substantially centrally located extension of the base region which also terminates at the first surface. Emitter, base and collector electrodes are ohmically disposed on the respective semiconductor regions and a Schottky barrier contact is formed on the base region extension, the Schottky contact being connected to the emitter electrode.

REFERENCES:
patent: 3358197 (1967-12-01), Scarlett
patent: 3649883 (1972-03-01), Augustine
patent: 3740621 (1973-06-01), Carley
patent: 3836995 (1974-09-01), Wheatley et al.
patent: 3909837 (1975-09-01), Kronlage
patent: 3936863 (1976-02-01), Olmstead
patent: 3943554 (1976-03-01), Russell et al.
patent: 4017882 (1977-04-01), Kannam et al.
V. Gani et al., "Bilevel Dual Impedance Monolithic Structure," IBM Tech. Discl. Bull. vol. 18#5, Oct. 1975, pp. 1407-1408.

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