Semiconductor device having protective element

Details Semiconductor device having protective element Semiconductor device having protective element

1988-11-28

1991-02-05

Hille, Rolf

357 231, 357 2311, 357 54, H01L 2978

Patent

active

049909843

ABSTRACT:
A semiconductor device having a protective transistor for protecting an internal circuit from an excess voltage applied to an input terminal is disclosed. The protective transistor includes first and second channel regions coupled in series each other and formed between source and drain regions. A portion of a field insulating layer is provided on the first channel region as a gate insulating film, and the drain region is separated from the portion of the field insulating layer by the second channel region.

REFERENCES:
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 4668970 (1987-05-01), Yatsuda et al.
patent: 4672409 (1987-06-01), Takei et al.
patent: 4727405 (1988-02-01), Misu
Lin et al., "A CMOS VLSI ESD Input Protection Device", EOS/ESD, Oct. 1984.
"Protection of MOS Integrated Circuits from Destruction by Electrostatic Discharge", J. K. Keller Electrical Overstress/Electrostatic Discharge Symposium Proceedings, Rome Air Development Center (1980), pp. 73-80.

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