1976-05-11
1977-03-08
Wojciechowicz, Edward J.
357 61, 357 88, 357 89, 357 90, H01L 2904, H01L 29161
Patent
active
040115828
ABSTRACT:
One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.
REFERENCES:
patent: 2813048 (1957-11-01), Pfann
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Squillaro Jerome C.
Winegar Donald M.
Wojciechowicz Edward J.
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