MOSFET antiparasitic layer

Details MOSFET antiparasitic layer MOSFET antiparasitic layer

1970-09-02

1977-03-08

Larkins, William D.

357 13, 357 23, 357 41, 357 42, 357 60, H01L 2978, H01L 2704

Patent

active

040115810

ABSTRACT:
A semiconductor device which is provided, for the purpose of eliminating parasitic MOSFETs formed between at least two circuit elements (such as MOSFET, TRANSISTOR, RESISTOR, and the like) on a semiconductor substrate, with a high impurity concentration layer of the same conduction type as the substrate in a manner such that the layer is not only in the semiconductor substrate between said circuit elements but is also partially overlapped by the circuit element regions.

REFERENCES:
patent: 3440502 (1969-04-01), Lin et al.
patent: 3512058 (1970-05-01), Khajezadeh et al.
patent: 3514845 (1970-06-01), Legat et al.
patent: 3532945 (1970-10-01), Weckler
patent: 3555374 (1971-01-01), Usuda
patent: 3577043 (1971-05-01), Cook

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