Photodiode

Details Photodiode Photodiode

1975-06-05

1977-03-08

Edlow, Martin H.

357 71, 357 67, 357 10, H01L 2714, H01L 2348

Patent

active

040115780

ABSTRACT:
The invention relates to a photodiode having a semiconductor body comprising regions of opposite conductivity types which are separated by a p-n junction and of which at least one region has an anti-reflective layer.
The anti-reflective layer consists of tin-doped indium oxide and forms an ohmic connection with the one region.

REFERENCES:
patent: 2965519 (1960-12-01), Christensen
patent: 3416044 (1968-12-01), Dreyfus
patent: 3849707 (1974-11-01), Braslau
patent: 3928864 (1975-12-01), Fertin

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