Power semiconductor component with pressure contact

Details Power semiconductor component with pressure contact Power semiconductor component with pressure contact

1994-08-09

1996-04-09

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

By pressure alone

257719, 257747, 257764, H01L 2954, H01L 2318

Patent

active

055064523

ABSTRACT:
A power semiconductor component includes a semiconductor body having anode and cathode sides and a given thermal coefficient of expansion. Contact electrodes are each disposed on a respective one of the anode and cathode sides and are made of a metal having a thermal coefficient of expansion differing from the given thermal coefficient of expansion. At least two contact surfaces are disposed one above the other under pressure, between the semiconductor body and the contact electrodes. At least one of the contact surfaces has a layer formed of an amorphous carbon-metal compound.

REFERENCES:
patent: 3652904 (1972-03-01), Takahashi et al.
patent: 3786168 (1974-01-01), Jaecklin et al.
patent: 3789248 (1974-01-01), Jaecklin et al.
patent: 3858096 (1974-12-01), Kuhrt et al.
patent: 3859143 (1975-01-01), Krebs
patent: 3969754 (1976-07-01), Kuniya et al.
patent: 4196442 (1980-04-01), Kuniya et al.
patent: 4320571 (1982-03-01), Hauck
patent: 4403242 (1983-09-01), Tsuruoka
patent: 4427993 (1984-01-01), Fichot et al.
patent: 5008735 (1991-04-01), Edmond et al.
Patent Abstract of Japan No. JP 59-021033 (Kazuo) May 15, 1984.
Patent Abstract of Japan No. JP 57-078144 (Kenichi et al.), Aug. 17, 1982.
Patent Abstract of Japan No. JP 60-239044 (Itou), Nov. 27, 1985.
Publication: Surface and Coating Technology 49 (1991) pp. 543-547 (Dimigen et al.) "Microstructure and wear behavior of metal-containing diamond-like coatings".

Affiliated with

Also associated with

Rating

Power semiconductor component with pressure contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor component with pressure contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor component with pressure contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-140929