Semiconductor device with improved electromigration resistance a

Details Semiconductor device with improved electromigration resistance a Semiconductor device with improved electromigration resistance a

1995-05-04

1996-04-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257773, 257775, 257776, 257758, 437180, H01L 2348, H01L 2120

Patent

active

055064507

ABSTRACT:
Semiconductor devices having improved electromigration resistance in their connections through dielectric layers are described. Where a conductive metal line overlies a dielectric layer and makes contact to a lower conductive structure through the dielectric layer by virtue of a conductive member, such as a tungsten plug or metal contact, the conductive metal line is provided with an end portion not otherwise connected to a conductive structure. The end portion serves as a reservoir of extra conductive material supplying the conductive metal line as the line is depleted through stress migration and/or electromigration.

REFERENCES:
patent: 5126819 (1992-06-01), Abe et al.
patent: 5288948 (1994-02-01), Fukuda et al.
patent: 5461260 (1995-10-01), Varker et al.
patent: 5463255 (1995-10-01), Isono
S. M. Sze, ed.; "VLSI Technology;" McGraw-Hill, New York; pp. 369-371 (1983).

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