Solid-state image sensing device capable of reading two-line sig

Details Solid-state image sensing device capable of reading two-line sig Solid-state image sensing device capable of reading two-line sig

1994-02-14

1995-03-07

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257232, 257233, 257239, 257240, 348297, 348320, H01L 2978, H01L 2714, H01L 3100

Patent

active

053960912

ABSTRACT:
Solid-state image sensing device is provided with a synthesizing section for synthesizing odd-field signal charges and even-field signal charges. The synthesizing section is a transfer path formed outside of the photosensitive region or vertical transfer paths formed in the photosensitive region. For the signal charge synthesis through vertical transfer path, after the integration, the signal charges are read simultaneously from the odd-line pixel group and the even-line pixel group. Further, it is possible to select either the method of outputting the odd-field signal charges and the even-field signal charges separately or the method of outputting the synthesized odd- and even-field signal charges.

REFERENCES:
patent: 5148013 (1992-09-01), Yamada

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