Radiation hardened field oxides for NMOS and CMOS-bulk and proce

Details Radiation hardened field oxides for NMOS and CMOS-bulk and proce Radiation hardened field oxides for NMOS and CMOS-bulk and proce

1987-12-07

1991-02-05

James, Andrew J.

357 238, 357 2312, 357 50, H01L 2978

Patent

active

049909835

ABSTRACT:
The field oxide surrounding an NMOS device or the field oxide around the NMOS device and between the NMOS and PMOS devices in CMOS is split or notched to make at least one thin field oxide region under which a degenerative P+ region is formed in the substrate to increase threshold voltages of the undesired field oxide FET.

REFERENCES:
patent: 3450960 (1969-07-01), Chang et al.
patent: 3751722 (1973-08-01), Richman
patent: 3892609 (1975-07-01), Coppen
patent: 3974516 (1976-08-01), Steinmaier
patent: 4063274 (1977-12-01), Dingwall
patent: 4282648 (1981-08-01), Yu et al.
patent: 4458262 (1984-07-01), Chao
patent: 4613886 (1986-09-01), Chwang
patent: 4748489 (1988-05-01), Komatsu

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