Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1994-07-14
1996-03-05
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 95, 117930, 117935, H01L 2120
Patent
active
054958237
ABSTRACT:
Disclosed is a semiconductor apparatus in which a single-crystalline thin film can be formed on a semiconductor substrate at a low temperature not higher than 800.degree. C. and a method of manufacturing such a semiconductor apparatus. In this semiconductor apparatus and the manufacturing method thereof, a silane gas is supplied onto a single-crystalline silicon substrate under condition of a temperature not higher than approximately 540.degree. C. and an amorphous silicon thin film is formed on a surface of the silicon substrate. At the same time, the amorphous silicon thin film is single-crystallized to form a single crystal silicon thin film, and single crystal silicon thin films are successively epitaxially grown. This enables those single crystal silicon thin films to be formed directly on the surface of the single-crystalline silicon substrate at a temperature lower than or equal to 800.degree. C.
REFERENCES:
patent: 5147826 (1992-09-01), Lui et al.
S. Wolf & R. N. Tauber, Silicon Processing for the VLSI Era Vol. 1: Process Technology Lattice Press, Sunset Beach, Calif. (1986).
Kunii et al, "Si Surface Cleaning by Si.sub.2 H.sub.6 --H.sub.2 Gas Etching and its Effects on Solid-Phase Epitaxy", Japanese Journal of Applied Physics, vol. 26, No. 11, (Nov. 1987), pp. 1816-1822.
Extended Abstracts (The 38th Spring Meeting, 1991); The Japan Society of Applied Physics and Related Societies No. 2., p. 739 . "Silty in Situ Pre Cleaning for low Temperature Epitaxial Growth" by Numano et al.
Breneman R. Bruce
Fleck Linda J.
Mitsubishi Denki & Kabushiki Kaisha
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