Method for fabricating a thin film transistor

Details Method for fabricating a thin film transistor Method for fabricating a thin film transistor

1993-03-29

1995-03-07

Thomas, Tom

Fishing, trapping, and vermin destroying

437 40, 437937, H01L 21469

Patent

active

053958047

ABSTRACT:
A method for fabricating a thin film transistor formed on an insulator is disclosed. The method includes the steps of forming a non-single crystal silicon film on the insulator, forming a polysilicon film on the insulator by thermally treating the non-single crystal silicon film in an atmosphere of a gas including hydrogen halogenide, and forming a channel region in the polysilicon film.

REFERENCES:
patent: 4992839 (1991-02-01), Shirai
Aoyama et al.: Extended Abstracts of the 2nd, (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 389-392, "Leakage Currents Reduction of Poly-Si TFT's by Two Step Annealing".
Ikeda et al., IEDM '90, 18.1, pp. 469-472, "A Polysilicon Transistor Technology For Large Capacity SRAMs", 1990.

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