Refractory metal silicide deposition process

Details Refractory metal silicide deposition process Refractory metal silicide deposition process

1991-12-19

1995-03-07

Maples, John S.

Fishing, trapping, and vermin destroying

437190, 149DIG147, H01L 21441

Patent

active

053957989

ABSTRACT:
A method for forming a refractory metal silicide on a semiconductor device is disclosed. The method comprises the steps of depositing a layer of refractory metal on the device and reacting the layer with nitrogen. The reaction is accomplished at a partial pressure of nitrogen greater than one atmosphere. The disclosed process allows thin layers of low resistance silicide to be formed for use as an ohmic contact while also forming a nitride layer for use as a device-to-device interconnection.

REFERENCES:
patent: 4690730 (1987-09-01), Tang et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 5043300 (1991-08-01), Nulman
Shih-Chang Chen, et al., "Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon", Japanese Journal of Applied Physics, vol. 30, No. 11A, Nov. 1991, pp. 2673-2678.
Tohru Hara, et al., "Formation of Titanium Nitride Layers By the Nitridation of Titanium In High-pressure Ammonium Ambient", Applied Physics Letters, vol. 57, No. 16, Oct. 1990, pp. 1660-1662.

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