Process for fabricating a semiconductor integrated circuit

Details Process for fabricating a semiconductor integrated circuit Process for fabricating a semiconductor integrated circuit

1992-07-29

1995-03-07

Fourson, George

Fishing, trapping, and vermin destroying

437 60, H01L 2128, H01L 2162

Patent

active

053957822

ABSTRACT:
A LOCOS film is formed on the surface of an epitaxial layer. A gate electrode is formed on the epitaxial layer. At the same time that the gate electrode is formed, a lower electrode is formed on the LOCOS film. A diffusion region is formed on each element and then covered with a BPSG film. A contact hole and capacitor exposure are formed in a capacitor element simultaneously. A film of SiN is deposited in layers over the capacitor exposure. The film of SiN covers undesired areas about the capacitor exposure. Excess SiN film outside the desired area over the capacitor exposure is removed by masking and etching to leave the remaining film area over the capacitor exposure to serve as a capacitor dielectric film. Finally, an Al upper electrode is formed over the SiN film to serve as electrode wiring. The process reduces the series resistance of the capacitor element, thereby reducing power required for charging the dielectric, and speeding the charging process. The low resistance eliminates parasitic leakage currents and the formation of parasitic capacitances.

REFERENCES:
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4997794 (1991-03-01), Josquin et al.
patent: 5075296 (1991-12-01), Re et al.
patent: 5108941 (1992-04-01), Paterson et al.

Affiliated with

Also associated with

Rating

Process for fabricating a semiconductor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating a semiconductor integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating a semiconductor integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1405743