Semiconductor heterojunction device with graded bandgap

Details Semiconductor heterojunction device with graded bandgap Semiconductor heterojunction device with graded bandgap

1990-04-27

1991-10-29

James, Andrew J.

357 61, H01L 29161, H01L 29205, H01L 29225, H01L 2920

Patent

active

050619730

ABSTRACT:
The semiconductor materials of junction forming layers of a heterojunction tructure are interfaced by a gap region that is graded by degree of alloying of those components of an interfacing material which are respectively compounded in the semiconductor materials of the junction forming layers having different bandgaps and band edges that are aligned by the grading of the interfacing gap region to selectively control rectifying junction characteristics.

REFERENCES:
patent: 4568958 (1986-02-01), Baliga
patent: 4568959 (1986-02-01), Chang et al.
patent: 4639756 (1987-01-01), Rosbeck et al.
patent: 4719155 (1988-01-01), Matsumoto
patent: 4753684 (1988-06-01), Ondris et al.
patent: 4768074 (1988-08-01), Yoshida et al.
patent: 4769341 (1988-09-01), Luryi
patent: 4914494 (1990-04-01), Webb

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