Thin film forming apparatus having a gas flow settling device

Details Thin film forming apparatus having a gas flow settling device Thin film forming apparatus having a gas flow settling device

1989-07-06

1991-06-18

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118725, 118729, 427 39, 427 451, 4272552, 4272555, C23C 1650

Patent

active

050241826

ABSTRACT:
An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction. The apparatus further has a first gas supplying device for introducing the first gas into the plasma generating chamber and for introducing the first gas activated by a plasma in the plasma generating chamber into the reaction chamber through the first gas inlet, and second gas supplying device for supplying the second gas into the reaction chamber through the second gas inlet. A first flow settling device having plates disposed transverse to the flow of the first gas is positioned between the first gas inlet and plasma chamber. A second flow settling device may be located between the second gas supplying device and second gas inlet.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo
patent: 4805555 (1989-02-01), Itoh

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