Surface acoustic wave device

Details Surface acoustic wave device Surface acoustic wave device

1990-07-06

1991-10-29

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310313R, 310363, 333193, H01L 4108

Patent

active

050618709

ABSTRACT:
A surface accoustic wave device includes a substrate which is made up of single-crystalline dielectric member and a piezoelectric thin film epitaxially grown thereon. An aluminum electrode defining an interdigital electrode is formed along the interface between the dielectric member and the piezoelectric thin film. This aluminum electrode is formed of an aluminum film which is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum electrode is suppressed, while enabling epitaxial growth of the piezoelectric thin film over the entire surface insert.

REFERENCES:
patent: 4449107 (1984-05-01), Asai et al.
patent: 4511816 (1985-04-01), Mikoshiba et al.
patent: 4567393 (1986-01-01), Asai et al.
patent: 4775814 (1988-10-01), Yuhara et al.
patent: 4935658 (1990-06-01), EerNisse et al.
patent: 4942327 (1990-07-01), Watanabe et al.
patent: 4968954 (1990-11-01), Ryuo et al.
"High Freq. and Low-Dispersion SAW Devices on AlN/Al.sub.2 O.sub.3 and AlN/Si for Sig. Proc.", Conf. 1980, Ultrasonics Symposium, Boston, Mass., Nov. 5-7, 1980.
"ZnO Thin-Film SAW Devices for High Freq. Range", 10-79 National Technical Report, vol. 25, No. 5.

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