Static induction transistor and manufacturing method of the same

Details Static induction transistor and manufacturing method of the same Static induction transistor and manufacturing method of the same

1988-04-04

1990-07-31

Hille, Rolf

357 30, 357 52, H01L 2980

Patent

active

049453920

ABSTRACT:
A static induction transistor has in a surface region of a first type of high-resistance semiconductor, a source region formed by a first type of diffusion layer and a gate region which surrounds the source region from at least two directions and which is formed by a second type of diffusion layer which is diffused deeper than the layer of the source region. The static induction transistor also has a first or second type of impurity layer formed immediately beneath the source region. A second type of impurity layer is further formed in the surface region of the first type of high-resistance semiconductor outside of the gate region. Furthermore, a first type of impurity layer is formed in the surface region of the first type of high-resistance semiconductor, or a first or a second type of impurity layer is formed in the surface region of the first type of high-resistance semiconductor between the source region and the gate region at the same depth as or shallower than the source region. As a result, the pinch-off voltage of the transistor can be easily controlled. Furthermore, photoelectric charge generated adjacent to the surface is immediately captured in the gate region without any loss, whereby generation of residual images can be prevented. Furthermore, extension of a depletion layer can be restricted as far as possible, whereby a thermally excited charge generated in the depletion layer can be reduced, causing dark currents to be restricted. Consequently, the S-N ratio can be improved.

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patent: 4626884 (1986-12-01), Shannon
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