Method of manufacturing a bipolar transistor

Details Method of manufacturing a bipolar transistor Method of manufacturing a bipolar transistor

1990-03-26

1991-10-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 63, 437 73, 437 33, 437239, H01L 21328

Patent

active

050616455

ABSTRACT:
A method of manufacturing a bipolar transistor semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.

REFERENCES:
patent: 4016007 (1977-04-01), Wada et al.
patent: 4099987 (1978-07-01), Jambotka
patent: 4372030 (1983-02-01), Saitoh
patent: 4378630 (1983-04-01), Horng
Colclaser, R. A., Microelectronics; Processing and Device Design, John Wiley & Sons, 1980, pp. 84-115.

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