Method of manufacturing semiconductor on insulator

Details Method of manufacturing semiconductor on insulator Method of manufacturing semiconductor on insulator

1990-07-25

1991-10-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 21, 437248, H01L 21477

Patent

active

050616420

ABSTRACT:
After the oxygen ion is implanted to the surface of (100) Si single crystal substrate, the annealing of about 10 cycles is conducted under the nitrogen gas ambience, wherein the high temperature of 1150.degree. C. and low temperature of 450.degree. C. are alternately repeated during one heat cycle of about seven minutes and thereby a Si single crystal layer is formed near the surface and the SiO.sub.2 insulator is then formed just under the Si single crystal layer.

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Journal of applied Physics, vol. 59, No. 10, May 1986, pp. 3495-3502, American Institute of Physics, Woodbury, N.Y., U.S.
H. J. Stein et al., "Rapid Thermal Annealing and Regrowth of Thermal Donors in Silicon" p. 3495, Abstract.

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