Method of laser-marking semiconductor devices

Electric heating – Metal heating – By arc

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21912175, B23K 2600

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active

049452045

ABSTRACT:
The surface of the resin on a semiconductor device is subjected to a marking by a pulsed laser having an energy density of 3 to 60 J/cm.sup.2 and a pulse width of 0.1 ms or less. By applying the laser beam to the surface a resin encapsulation, the resin can be instantaneously burnt and vaporized, as a result of which, the quantity of the cinders from burning of the resin at the time of the laser-marking is reduced.

REFERENCES:
patent: 4081654 (1978-03-01), Mracek
patent: 4128752 (1978-12-01), Gravel
patent: 4370542 (1983-01-01), Mills et al.
patent: 4405852 (1983-09-01), Bononi
patent: 4626656 (1986-12-01), Ootsuka et al.
Electronic Packing Technology, vol. 2, No. 2, Feb. 1986.

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