Monolithic integrated reference voltage source

Details Monolithic integrated reference voltage source Monolithic integrated reference voltage source

1982-02-18

1984-05-29

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 357 23, G05F 316, H01L 2978

Patent

active

044517440

ABSTRACT:
The invention discloses a monolithic integrated reference voltage source consisting of a source-drain series arrangement of a depletion-type n-channel MOSFET connected to the supply potential and of an enhancement-type n-channel MOSFET connected to a reference potential. The gate electrode of the depletion-type transistor is connected to the reference potential, while the reference voltage is taken off the point connecting the two transistors, to which point the gate electrode of the enhancement-type transistor is connected. When certain manufacturing requirements are observed as regards the gate oxide layer thickness, the substrate doping and the ratio r of the width-to-length ratio (W=width and L=length of the conducting channel), the circuit displays a very small temperature dependence of the reference voltage and a small surface requirement.

REFERENCES:
patent: 3832644 (1974-08-01), Nagata et al.
patent: 4052229 (1977-10-01), Pashley
patent: 4078947 (1978-03-01), Johnson et al.
patent: 4224539 (1980-09-01), Musa et al.
patent: 4281261 (1981-07-01), Adam
patent: 4301380 (1981-11-01), Thomas
patent: 4365263 (1982-12-01), Kawagoe
Dennard et al, "Minimum Defect Propagation, Enhancement/Depletion Process", IBM Tech. Discl. Bull.; vol. 16, No. 5, pp. 1530-153; 10/73.
Runge, "Threshold Voltage Shift of MOS Transistors by Ion Implantation", Electronic Engineering; pp. 41-43; 1/76.

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