Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1991-07-23

1992-09-08

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, H01S 319

Patent

active

051464675

ABSTRACT:
A semiconductor laser device producing visible light includes a double heterojunction structure having a first conductivity type lower cladding layer, an active layer and a second conductivity type upper cladding layer, formed in a first epitaxial growth process of AlGaInP series materials and a contact layer formed in a second or later epitaxial growth process. The contact layer is In.sub.x GA.sub.1-x As.sub.y P.sub.1-y which can be grown at a lower temperature than used in the first process. Therefore, deterioration in laser characteristics due to the diffusion of dopant impurities during the growth of contact layer can be prevented, resulting in a semiconductor laser device having high performance and long lifetime.

REFERENCES:
patent: 4757510 (1988-07-01), Kaneno et al.
patent: 4974231 (1990-11-01), Gomyo
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5048037 (1991-09-01), Arimoto et al.
Tanaka et al., "Transverse-Mode-Stabilized Ridge Stripe AlGaInP Semiconductor Lasers Incorporating A Thin GaAs Etch-Stop Layer ", Applied Physics Letters, vol. 54, No. 15, Apr. 1989, pp. 1391-1393.
Nitta et al., "Astigmatism in Ridge-Stripe InGaAlP Laser Diodes" Japanese Journal of Applied Physics, vol. 28, No. 11, Nov. 1989, pp. L2089-L2091.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-139915