Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1991-04-11

1992-09-08

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, H01S 319

Patent

active

051464667

ABSTRACT:
A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

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patent: 4982409 (1991-01-01), Kinoshita et al.
patent: 5010556 (1991-04-01), Imanaka et al.
Kenichi Kobayashi et al., AlGaInP Double Heterostructure Visible-Light Laser Diodes with A GaInP . . . , IEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 704-711.
J. V. DiLorenzo, Vapor Growth of Eptaxial GaAs: A Summary of Parameters Which Influence the Purity . . . , Journal of Crystal Growth 17 (1972), pp. 189-206.
M. Wada, et al., Monolithic High-Power Dual-Wavelength GaAlAs Laser Array, Appl. Phys. Lett., vol. 43, No. 10, Nov. 15, 1983, pp. 903-905.
Isao Hino et al., MOCVD Growth of (AlxGAl-x)yInl-yP and Double Heterostructures for Visible Light Lasers, Journal of Crystal Growth 88 (1984) pp. 483-489.
Tohru Suzuki et al, Band-Gap Anomaly and Sublattice Ordering in GaInP and AlGalnP Grown by Metalorganic Vapor Phase Epitaxy, Japanese Journal of Applied Physics, vol. 27, No. 11, Nov. 1988, pp. 2098-2106.
S. Kawata et al., Room-Temperature, Continuous-Wave Operation for Mode-Stabilized AlGaInP Visible-Light Semiconductor Laser with A . . . , Electronics Letters, Nov. 24, 1988, vol. 24, No. 24, pp. 1489-1490.

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