1983-02-07
1985-12-03
Larkins, William D.
357 54, 357 67, H01L 2350
Patent
active
045568979
ABSTRACT:
A semiconductor device has a semiconductor substrate with a first insulating layer formed thereon. A first wiring includes a layer extending over the first insulating layer and a metallic film of refractory metal having high melting point disposed on the wiring layer. A contact hole is formed in the second insulating layer. Then, a second wiring, having the same material as the first wiring layer, is provided as an upper layer. The metallic film is removed inside the contact hole and the second wiring layer is directly connected to the first wiring layer. Aluminum, silicon, aluminum-silicon alloy, copper-aluminum alloy and the like can be used for the first and second wiring layers. The metallic film may be made of titanium, titanium nitride, molybdenum, tungsten, platinum, chromium or may be a composite film or alloy film of these metals. Further, alloys of above-mentioned high melting point materials may be used. The metallic film has the thickness of about 300 to 3,000 .ANG. and preferably, 500 to 1,500 .ANG.. Each of the wiring layers has a thickness of about 0.3 to 2.5 .mu.m, and preferably, 0.8 to 1.8 .mu.m.
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Ohseki Noboru
Yorikane Masaharu
Lamont John
Larkins William D.
Nippon Electric Co. Ltd.
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